Defects Engineering of ZrTe5 for Stabilizing Ideal Topological States
Authors
Chia-Hsiu Hsu
Zezhi Wang
Sen Shao
Yoshinori Okada
Feng-Chuan Chuang
Dong Xing
Ilya Belopolski
Cheng-Long Zhang
Guoqing Chang
Abstract
ZrTe5 is a highly tunable, high-mobility topological material that hosts a rich variety of quantum phenomena, making it a promising platform for next-generation quantum technologies. Despite intensive research efforts, experimental studies have reported inconsistent and sometimes conflicting results for its electronic and topological states, largely due to variations in sample quality. Here, through systematic frst-principles investigations of all intrinsic point defects, we identify a practical route to achieving stable and ideal topological characteristics in ZrTe5. We show that the competition between two dominant charged defects, donor-like Zr interstitials and acceptor-like Te vacancies, governs the Fermi-level position. Furthermore, variations in defect density determine the topological phases of the samples. We theoretically propose and experimentally confrm that increasing the Te/Zr ratio during crystal growth effectively suppresses intrinsic defects and stabilizes ZrTe5 in a nearly ideal weak topological insulator state. These fndings provide clear guidance for defect control and sample optimization, paving the way toward robust and reproducible realization of topological quantum states in ZrTe5 for future quantum applications.
